Wafer bonding

We offer bonding of substrates manufactured from a variety of materials, including semiconductor materials (silicon and others) and dielectrics (glass, ceramics and others), for use in microelectronics, nanoelectronics, photonics and microsystems. Suitable for working with circular substrates from 100 mm to 200 mm (100 mm/4”, 150 mm/6”, 200 mm/8”) and pieces no smaller than 10 mm x 10 mm.

Bonding of specimens by the following techniques:

  • adhesive bonding (glue)
  • eutectic bonding (thermocompression)
  • anodic bonding
  • glass frit bonding
  • direct bonding

Process parameters:

  • chamber flushed with inert gas
  • temperature control range from 50 °C to 500 °C with an accuracy of ±3 °C, a stability of ±1.0 °C and a homogeneity of ±2 %
  • clamping force up to 20 kN, with programmable adjustment
  • maximum vacuum of 5×10-5 mbar (process chamber pressure control by dosing process gas – N2 , ranging from 1 to 1000 mbar)
  • possibility of aligning substrates using a pattern/mask alignment device

Keywords: bonding, wafer bonding, substrate bonding, adhesive bonding, thermocompression, anodic bonding, direct bonding, glass frit

contact: uslugi.cezamat@pw.edu.pl

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