We offer a process for annealing large batches of semiconductor substrates in a controlled manner.
As part of the service, it is possible to:
- annealing in an atmosphere of nitrogen, argon and/or a mixture of nitrogen and hydrogen at temperatures up to 1200 °C
- process large batches in a reproducible manner in a single process: 25 substrates with a diameter of 200 mm and 50 substrates with a diameter of 100 mm and 150 m
Keywords: annealing, controlled annealing