thermal oxidation

We offer a process for oxidizing large batches of silicon substrates in a controlled and reproducible manner. The ability to obtain good quality thermal oxides in the thickness range from single nanometers to micrometers.

As part of the service, we offer:

  • wet oxidation at temperatures up to 1200 °C
  • dry oxidation with low oxygen flow at temperatures up to 1000 °C
  • the possibility of reproducibly processing large batches in a single process: 25 substrates of 200 mm diameter and 50 substrates of 100 mm and 150 mm diameter

Keywords: oxidation, thermal oxidation, dry oxidation, wet oxidation, oxides

contact: uslugi.cezamat@pw.edu.pl

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