We offer a process for oxidizing large batches of silicon substrates in a controlled and reproducible manner. The ability to obtain good quality thermal oxides in the thickness range from single nanometers to micrometers.
As part of the service, we offer:
- wet oxidation at temperatures up to 1200 °C
- dry oxidation with low oxygen flow at temperatures up to 1000 °C
- the possibility of reproducibly processing large batches in a single process: 25 substrates of 200 mm diameter and 50 substrates of 100 mm and 150 mm diameter
Keywords: oxidation, thermal oxidation, dry oxidation, wet oxidation, oxides