rapid thermal processing (rtp)

We offer rapid thermal annealing processes for silicon substrates with heating rates up to 200 °C/s.

Process specifications:

  • annealing of 4”, 6”, 8” substrates with heating rates up to 200 °C/s,
  • heating of irregularly shaped substrates at a heating rate of up to 20 °C/s
  • Maximum process temperature: 1400 °C
  • processes can be carried out under a gas atmosphere of N2 , Ar, O2 , H2 , NH3 , N2 O
  • annealing under reduced pressure possible

Keywords: rtp, rapid thermal processing, annealing

contact: uslugi.cezamat@pw.edu.pl

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