Rapid Thermal Processing (RTP)

We offer rapid thermal annealing processes for silicon substrates with heating rates up to 200 °C/s.

Process specifications:

annealing of 4”, 6”, 8” substrates with heating rates up to 200 °C/s,
heating of irregularly shaped substrates at a heating rate of up to 20 °C/s
Maximum process temperature: 1400 °C
processes can be carried out under a gas atmosphere of N2 , Ar, O2 , H2 , NH3 , N2 O
annealing under reduced pressure possible

Keywords: rtp, rapid thermal processing, annealing