We offer Plasma Enhanced Chemical Vapour Deposition (PECVD) for applications including nanoelectronics, photonics, micromechanics, passivation, encapsulation or masking layers. The tool makes it possible to deposit layers of oxides, nitrides and oxynitrides of silicon with adjustable refractive index, as well as to obtain layers of materials with different mechanical stresses in a controlled manner.

Process conditions:

  • layer thicknesses from tens of nanometers to single micrometers
  • 13.56 MHz RF plasma generator and a generator with a frequency range of 50-450 kHz
  • possibility to work on single substrates up to 200 mm in diameter, as well as on smaller substrates of any shape
  • deposition of layers of silicon dioxide (SiO2 ), silicon nitride (SiNx ), silicon oxynitride (SiOx Ny ), amorphous silicon (a-Si) with controllable composition and stresses

Keywords: cvd deposition, pecvd, masking layers, silicon oxide, silicon nitride, silicon oxynitride, amorphous silicon


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