lpcvd deposition processes

We offer processes for the chemical vapour deposition of polysilicon and silicon nitride films under reduced pressure (Low Pressure Chemical Vapor Deposition).

We perform:

  • chemical vapour deposition under reduced pressure (Low Pressure Chemical Vapor Deposition) of polysilicon at temperatures up to 900 °C
  • low pressure chemical vapour deposition of silicon nitride at temperatures up to 900 °C
  • reproducible processing of large batches in a single process: 25 substrates of 200 mm diameter and 50 substrates of 100 mm and 150 mm diameter

Keywords: lpcvd, chemical deposition, polysilicon vapour phase, silicon nitride vapour phase

contact: uslugi.cezamat@pw.edu.pl

Skip to content