Ion implantation

We offer an ion implantation process for electronics, optoelectronics, spintronics, among others. In electronic applications, ion implantation enables the manufacture of sources and drains, the threshold voltage forming of CMOS devices, the doping of the emitter, base and collector areas of bipolar devices, as well as the performing of Well and Halo implantation. For silicon electronics applications, ions of the following elements and compounds are used: B, P, As, Si. For alternative semiconductors, ions of groups IIb, IIIa, IVa, Va, VIa are used. During implantation, the substrate temperature does not exceed 100 °C. For optoelectronics and spintronics, it is possible to implant with rare earth ions and transition metal ions. The device is also suitable for defect engineering with substrates heated to 500 °C. The additional equipment of a robot for automatic wafer loading allows this tool to be used in small batch production.

Process conditions:

  • ability to implant oxygen, nitrogen, hydrogen, argon, boron and other ions (in a wide mass range, that is, 1-210 AMU)
  • possibility to implant on 150 mm or 200 mm substrates in automatic cycle and 100 mm. Smaller substrates by prior arrangement
  • helium-assisted substrate cooling – possibility to implant through a mask of thick photoresist
  • possibility of implantation at elevated, controlled substrate temperature from 100 °C to 500 °C
  • accelerating voltage from 5 kV to 200 kV
  • beam current up to 1.5 mA (depending on ion type)

Keywords: implantation, ion implantation, optoelectronics, spintronics, threshold voltage formation, well and halo, defect engineering


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