Marcin Myśliwiec, MSc. Eng.

Research Assistant


Graduate from the Faculty of Electronics and Information Technology of the Warsaw University of Technology (BSc 2011). In 2013, he defended his master's thesis at the Faculty of Electronics and Technology of the Warsaw University of Technology, "Flip-chip connections in SiC diode assembly at temperatures up to 350 °C". Since December 2013, he has been associated with the CEZAMAT project, initially in the field of equipping and commissioning laboratories and research equipment. In 2013, he completed a 6-month internship at the IMEC research center in Belgium, where he was involved in the preparation of SiGe substrates for epitaxy processes and revealing material defects using chemical methods. In 2011-2016, he worked at the Institute of Electron Technology in the production and characterization of power and high-frequency devices made of III-V semiconductors with a wide band gap.

Areas of research

  • ion implantation (doping of semiconductors, modification of the surface of semiconductor substrates)
  • semiconductor devices packaging
  • assembly technologies for wide-band semiconductors operating at high temperatures

Selected Publications

  1. P. Górecki, M. Myśliwiec, K. Górecki and R. Kisiel, "Influence of Packaging Processes and Temperature on Characteristics of Schottky Diodes Made of SiC," in IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 9, no. 4, pp. 633-641, April 2019, doi: 10.1109/TCPMT.2019.2894970
  2. P. Górecki, K. Górecki, R. Kisiel and M. Myśliwiec, "Thermal Parameters of Monocrystalline GaN Schottky Diodes," in IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2132-2138, May 2019, doi: 10.1109/TED.2019.2907066
  3. Górecki, K., Bisewski, D., Zarębski, J., Kisiel, R. and Myśliwiec, M. (2017), "Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case", Circuit World, Vol. 43 No. 1, pp. 38-42.
  4. M. Śmietana, M. Dominik, M. Myśliwiec, N. Kwietniewski, P. Mikulic, B.S. Witkowski, W.J. Bock, Properties of silicon nitride thin overlays deposited on optical fibers — Effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactor, Thin Solid Films, Volume 603, 2016, Pages 8-13, ISSN 0040-6090,
  5. Myśliwiec, M., Kisiel, R. and Guziewicz, M. (2015), "Material and technological aspects of high-temperature SiC device packages reliability", Microelectronics International, Vol. 32 No. 3, pp. 143-148.
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